Method of controlling on-die termination and system performing the same

ABSTRACT

A method of controlling on-die termination (ODT) in a multi-rank system including a plurality of memory ranks is provided. The method includes: enabling ODT circuits of the plurality of memory ranks into an initial state when the multi-rank system is powered on; enabling the ODT circuits of a write target memory rank and non-target memory ranks among the plurality of memory ranks during a write operation; and disabling the ODT circuit of a read target memory rank among the plurality of memory ranks while enabling the ODT circuits of non-target memory ranks among the plurality of memory ranks during a read operation.

CROSS-REFERENCE TO RELATED APPLICATION

This U.S. Non-provisional application is a continuation application ofU.S. patent application Ser. No. 15/918,526 filed Mar. 12, 2018, whichclaims priority under 35 USC § 119 to Korean Patent Application No.10-2017-0066377 filed on May 29, 2017 and Korean Patent Application No.10-2017-0089692 filed on Jul. 14, 2017, the disclosures of which areincorporated by reference in their entireties herein.

BACKGROUND 1. Technical Field

Exemplary embodiments relate generally to semiconductor integratedcircuits, and more particularly to a method of controlling on-dietermination and a system performing the method.

2. Discussion of Related Art

On-die termination (ODT) is introduced to enhance signal integrity byreducing signal reflection between a transmitter and a receiver. An ODTcircuit may reduce the signal reflection by providing a terminationresistance that is matched with an impedance of a transmission line.However, if ODT is implemented to enhance the signal integrity, powerconsumption may be increased.

SUMMARY

At least one embodiment of the inventive concept provides a method ofcontrolling an ODT that is capable of reducing power consumption andenhancing signal integrity.

At least one embodiment of the inventive concept provides a systemperforming a method of controlling ODT that is capable of reducing powerconsumption and enhancing signal integrity.

According to an exemplary embodiment of the inventive concept, a methodof controlling on-die termination (ODT) in a multi-rank system includinga plurality of memory ranks, includes, enabling ODT circuits of theplurality of memory ranks into an initial state when the multi-rankmemory system is powered on, enabling the ODT circuits of a write targetmemory rank and non-target memory ranks among the plurality of memoryranks during a write operation and disabling the ODT circuit of a readtarget memory rank among the plurality of memory ranks while enablingthe ODT circuits of non-target memory ranks among the plurality ofmemory ranks during a read operation.

According to an exemplary embodiment of the inventive concept, a methodof controlling on-die termination (ODT) in a memory device, includes,enabling an ODT circuit of the memory device into an initial state tohave a first resistance value when the memory device is powered on,enabling the ODT circuit during a write operation with respect to thememory device and disabling the ODT circuit during a read operation withrespect to the memory device.

According to an exemplary embodiment of the inventive concept, a systemincludes a plurality of memory ranks including a plurality of memorydevices and a memory controller configured to control the plurality ofmemory ranks. On die termination (ODT) circuits of the plurality ofmemory ranks are enabled into an initial state when the system ispowered on, the ODT circuits of the plurality of memory ranks areenabled during a write operation with respect to a write target memoryrank and non-target memory ranks among the plurality of memory ranks andthe ODT circuit of a read target memory rank among the plurality ofmemory ranks is disabled while the ODT circuits of non-target memoryranks among the plurality of memory ranks are enabled during a readoperation.

According to an exemplary embodiment of the inventive concept, a systemincludes a first memory rank and a second memory rank. The first memoryrank includes a plurality of first memory devices connected to a firston die termination (ODT) circuit. The second memory rank includes aplurality of second memory devices connected to a second ODT circuit.The first and second ODT circuits are enabled during a write operationof the first memory rank, and the first ODT circuit is disabled and thesecond ODT circuit is enabled during a read operation of the firstmemory rank.

The method of controlling ODT and the system performing the methodaccording to exemplary embodiments may reduce power consumption andenhance signal integrity through static ODT control such that the ODTcircuits of the target memory rank and the non-target memory ranks aremaintained generally in the enabled state whereas the ODT circuit of theread target memory rank is disabled during the read operation.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the present disclosure will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings.

FIG. 1 is a flow chart illustrating a method of controlling on-dietermination (ODT) according to an exemplary embodiment of the inventiveconcept.

FIG. 2 is a timing diagram illustrating a method of controlling ODTaccording to an exemplary embodiment of the inventive concept.

FIG. 3 is a block diagram illustrating a multi-rank system according toan exemplary embodiment of the inventive concept.

FIG. 4 is a block diagram illustrating an exemplary embodiment of amemory device included in the multi-rank system of FIG. 3.

FIG. 5 is a block diagram illustrating an embodiment of a datainput-output circuit included in the memory device of FIG. 4 accordingto an exemplary embodiment of the inventive concept.

FIG. 6 is a circuit diagram illustrating an ODT circuit included in thedata input-output circuit of FIG. 5 according to an exemplary embodimentof the inventive concept.

FIGS. 7, 8A and 8B are diagrams illustrating a method of controlling ODTin a write operation according to an exemplary embodiment of theinventive concept.

FIGS. 9 and 10 are diagrams illustrating a method of controlling ODT ina read operation according to an exemplary embodiment of the inventiveconcept.

FIG. 11 is a diagram illustrating an embodiment of resistance settingapplied to a method of controlling ODT according to an exemplaryembodiment of the inventive concept.

FIG. 12 is a diagram for describing an equivalent resistance of the ODTcircuit in a write operation corresponding to the resistance setting ofFIG. 11.

FIG. 13 is a diagram for describing an equivalent resistance of the ODTcircuit in a read operation corresponding to the resistance setting ofFIG. 11.

FIGS. 14A and 14B are diagrams for describing a center-tappedtermination (CTT).

FIGS. 15A and 15B are diagrams for describing a first pseudo-open drain(POD) termination.

FIGS. 16A and 16B are diagrams for describing a second POD termination.

FIG. 17 is a diagram illustrating an embodiment of resistance settingapplied to a method of controlling ODT according to an exemplaryembodiment of the inventive concept.

FIG. 18 is a diagram illustrating a CAS command according to anexemplary embodiment of the inventive concept.

FIGS. 19A and 19B are diagrams for describing a mode register for ODTaccording to an exemplary embodiment of the inventive concept.

FIG. 20 is a structural diagram illustrating a semiconductor memorydevice according to an exemplary embodiment of the inventive concept.

FIG. 21 is a block diagram illustrating a mobile system according to anexemplary embodiment of the inventive concept.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

The inventive concept will be described more fully hereinafter withreference to the accompanying drawings, in which some exemplaryembodiments of the inventive concept are shown. In the drawings, likenumerals refer to like elements throughout.

FIG. 1 is a flow chart illustrating a method of controlling on-dietermination (ODT) according to an exemplary embodiment of the inventiveconcept, and FIG. 2 is a timing diagram illustrating a method ofcontrolling ODT according to an exemplary embodiment of the inventiveconcept.

FIGS. 1 and 2 illustrate a method of controlling ODT in a multi-ranksystem including a plurality of memory ranks. The multi-rank system willbe described below with reference to FIG. 3. In an embodiment, a memoryrank is a set of memory chips connected to the same chip select signal.Thus, when there are multiple memory ranks, each memory rank receives adifferent chips select signal. In a further embodiment, the set ofmemory chips for a given memory rank share the same command and controlsignals.

Referring to FIG. 1, ODT circuits of a plurality of memory ranks areenabled into an initial state when the multi-rank system is powered on(S100). For example, enabling the ODT circuits into an initial state maybe performed by applying power to the ODT circuits and setting aresistance of each of ODT circuits to a same resistance value. The ODTcircuits of the plurality of memory ranks are enabled during a writeoperation with respect to a write target memory rank among the pluralityof memory ranks (S200). For example, if one of the ODT circuits of amemory rank that is currently the target of a write is currentlydisabled due to a previous read operation of the memory rank, then thatODT is enabled during the write. Further, the ODT circuit of the memoryrank that is currently the target of the write may be enabled some timebefore the actual write. The ODT circuit of a read target memory rankamong the plurality of memory ranks is disabled during a read operationwith respect to the read target memory rank (S300).

A memory access operation may include a write operation and a readoperation and the memory access operation may be differentiated fromother operations such as a mode register write operation, a moderegister read operation, a refresh operation, etc. In case of the writeoperation, the plurality of memory ranks may be divided by a writetarget memory rank that is an object of the write operation andnon-target memory ranks except the write target memory rank. Forexample, during a write operation, data is written to one of a pluralityof memory ranks (i.e., the write target memory rank) and the data is notwritten to the remaining memory ranks. In case of the read operation,the plurality of memory ranks may be divided by a read target memoryrank that is an object of the read operation and non-target memory ranksexcept the read target memory rank. For example, during a readoperation, data is read from one of a plurality of memory ranks (i.e.,the read target memory rank) and data is not read from the remainingmemory ranks. The write target memory rank or the read target memoryrank may be simply referred to as a target memory rank.

Referring to FIG. 2, at time point T1 when the multi-rank system ispowered on, the ODT circuits of the plurality of memory ranks areenabled into the initial state. In an exemplary embodiment, each of theODT circuits of the plurality of memory ranks is set to have a firstresistance value in the initial state. Even though FIG. 2 illustratesthat an enabling time point of the ODT circuits coincides with power-ontiming, the power-on sequence may be completed first and then after acertain time interval elapses the ODT circuits may be enabled into theinitial state.

During time intervals T2-T3 and T4-T5 while the write operation isperformed, all the ODT circuits of the memory ranks including the writetarget memory rank and the non-target memory ranks maintain an enabledstate. In an exemplary embodiment, the ODT circuits of the plurality ofmemory ranks are maintained in the initial state to have the firstresistance value during the write operation. In another exemplaryembodiment, a resistance value of the ODT circuit of the write targetmemory rank is changed from the first resistance value to a secondresistance value different from the first resistance value during thewrite operation.

During a time interval T6-T7 while the read operation is performed, theODT circuit of the read target memory rank is disabled and the ODTcircuits of the non-target memory ranks are enabled. In an exemplaryembodiment, the ODT circuits of the non-target memory ranks aremaintained in the initial state to have the first resistance valueduring the read operation. Even though FIG. 2 illustrates that the timeinterval of the disable of the read target memory rank coincides withthe time interval of the read operation, the time interval of thedisable of the read target memory rank may be less than the timeinterval of the read operation. In other words, it is sufficient thatthe ODT circuit of the read target memory rank is disabled only whileread data is output through data input-output pins. For example, the ODTcircuit of the read target memory rank may be disabled only while dataread from the target memory rank is output through pins of the targetmemory rank.

At time point T8 when the multi-rank system is powered off, a powersupply is blocked and the ODT circuits of all the memory ranks aredisabled. For example, a switch may be present between a power suppliedto the ODT circuits, and the blocking may be performed by opening theswitch. For example, when the switch is a transistor, the switch may beopened based on a control signal applied to a gate of the transistor.

If only the ODT circuit of the target memory rank is enabled and the ODTcircuits of the non-target memory ranks are disabled, signal integritymay be degraded because waves of signals injected to the non-targetmemory ranks are not terminated and thus jitters may be caused. Incontrast, according to at least one embodiment of the inventive concept,signal integrity may be enhanced by enabling the ODT circuits almostalways except the case of read target memory rank. Even though the ODTcircuits of the non-target memory ranks are always enabled, standbypower consumption is not caused in case of a pseudo-open draintermination as will be described below.

If the ODT circuits of the non-target memory ranks are enabled in thewrite operation and disabled in the read operation, all the memory ranksstandby to receive and decode a memory access command (e.g., a writecommand or a read command). In this case, the ODT circuits do not entera power-down mode and thus standby power consumption is increased. Incontrast, according to an exemplary embodiment, the ODT circuits of thenon-target memory ranks are maintained in the enabled state in the writeoperation and the read operation. In this case, the ODT circuits canenter the power-down mode more easily and thus the standby powerconsumption may be decreased.

In an embodiment, the ODT circuits of non-target memory ranks among theplurality of memory ranks have a constant resistance value regardless ofthe memory access command (e.g., a write command or a read command)output by the memory controller. This constant resistance value may bebased on a value stored in the mode register.

In an exemplary embodiment, the plurality of memory ranks are informedwhat memory rank corresponds to the target memory rank for the writeoperation or the read operation based on a plurality of rank selectionsignals respectively provided to the plurality of memory ranks. In thiscase, all of the memory ranks in the standby state enter the power-downmode and the target memory rank corresponding to the activated rankselection signal is woken up from the power-down mode to the normaloperation mode. The non-target memory ranks need not change the enabledstate of the ODT circuits and thus the power-down mode may be maintainedwith respect to the non-target memory ranks.

As such, the method of controlling ODT and the system performing themethod according to at least one embodiment may reduce power consumptionand enhance signal integrity through static ODT control such that theODT circuits of the target memory rank and the non-target memory ranksare maintained generally in the enabled state whereas the ODT circuit ofthe read target memory rank is disabled during the read operation.

Although a method of controlling ODT has been described for themulti-rank system with reference to FIGS. 1 and 2, the exemplaryembodiment may be applied to a system including a memory device of asingle memory rank.

In case of the single-rank system, the single memory device correspondsto the write target memory rank during the write operation and the readtarget memory rank during the read operation. According to an exemplaryembodiment, an ODT circuit of the memory device is enabled into aninitial state to have a first resistance value when the memory device ispowered on. The ODT circuit may be enabled during the write operationwith respect to the memory device and the ODT circuit may be disabledduring the read operation with respect to the memory device.

FIG. 3 is a block diagram illustrating a multi-rank system according toan exemplary embodiment of the inventive concept.

Referring to FIG. 3, a multi-rank system 10 includes a memory controller20 and a memory sub system 30. The memory sub system 30 includes aplurality of memory ranks RNK1-RNKM and each of the memory ranksRNK1-RNKM includes one or more memory devices MEM, M is a natural numbergreater than 1. The memory controller 20 and the memory sub system 30may include interface circuits, respectively, for mutual communication.The interface circuits may be connected through a control bus fortransferring a command CMD, an address ADDR and a control signal CTRL,etc. and a data bus for transferring data. In an embodiment, the commandCMD includes the address ADDR. The memory controller 20 may issue thecommand CMD and the address ADDR for accessing the memory sub system 30and data may be written in the memory sub system 30 or data may be readout from the memory sub system 30 under the control of the memorycontroller 20. In an embodiment, the memory controller 20 includesseparate pins for outputting the control signal CTRL, the command CMD,the address ADDR, and exchanging the data DATA with the memory subsystem 30. When the command CMD includes the address ADDR, the memorycontroller 20 may omit the pin for outputting the address ADDR.According to an exemplary embodiment, ODT circuits of the plurality ofmemory ranks RNK1-RNKM are enabled into an initial state when themulti-rank system 10 is powered on, the ODT circuits of the plurality ofmemory ranks RNK1-RNKM are enabled during a write operation with respectto a write target memory rank among the plurality of memory ranksRNK1-RNKM and the ODT circuit of a read target memory rank among theplurality of memory ranks RNK1-RNKM is disabled during a read operationwith respect to the read target memory rank.

FIG. 4 is a block diagram illustrating an exemplary embodiment of amemory device included in the multi-rank system of FIG. 3.

Referring to FIG. 4, a memory device 400 includes a control logic 410(e.g., a control logic circuit), an address register 420, a bank controllogic 430 (e.g., bank control logic circuit), a row address multiplexer440, a refresh counter 445, a row decoder 460, a column decoder 470, amemory cell array 480, a sense amplifier unit 485 (e.g., sense amplifiercircuit), an input-output (I/O) gating circuit 490 and a datainput-output (I/O) circuit 500.

The memory cell array 480 includes a plurality of bank arrays 480 a-480h. The row decoder 460 includes a plurality of bank row decoders 460a-460 h respectively coupled to the bank arrays 480 a-480 h. The columndecoder 470 includes a plurality of bank column decoders 470 a-470 hrespectively coupled to the bank arrays 480 a-480 h. The sense amplifierunit 485 includes a plurality of bank sense amplifiers 485 a-485 hrespectively coupled to the bank arrays 480 a-480 h.

The address register 420 receives an address ADDR including a bankaddress BANK_ADDR, a row address ROW_ADDR, and a column address COL_ADDRfrom the memory controller 20. The address register 420 provides thereceived bank address BANK_ADDR to the bank control logic 430, thereceived row address ROW_ADDR to the row address multiplexer 440, andthe received column address COL_ADDR to a column decoder 470.

The bank control logic 430 may generate bank control signals based onthe bank address BANK_ADDR. One of the bank row decoders 460 a-460 hcorresponding to the bank address BANK_ADDR may be activated based onthe bank control signals. One of the bank column decoders 470 a-470 hcorresponding to the bank address BANK_ADDR may be activated based onthe bank control signals.

The row address multiplexer 440 may receive the row address ROW_ADDRfrom the address register 420 and may receive a refresh row addressREF_ADDR from the refresh counter 445. The row address multiplexer 440may selectively output one of the row address ROW_ADDR or the refreshrow address REF_ADDR as a row address RA. The row address RA output fromthe row address multiplexer 440 may be applied to the bank row decoders460 a-460 h.

The activated one of the bank row decoders 460 a-460 h may decode therow address RA output from the row address multiplexer 440 and mayactivate a word-line corresponding to the row address RA. For example,the activated bank row decoder may apply a word-line driving voltage tothe word-line corresponding to the row address RA.

The column decoder 470 may include a column address latch. The columnaddress latch may receive the column address COL_ADDR from the addressregister 420 and temporarily store the received column address COL_ADDR.In an exemplary embodiment, in a burst mode, the column address latchgenerates column addresses that increment from the received columnaddress COL_ADDR. The column address latch may apply the temporarilystored or generated column addresses to the bank column decoders 470a-470 h.

The activated one of the bank column decoders 470 a-470 h may decode thecolumn address COL_ADDR output from the column address latch and maycontrol the input-output gating circuit 490 in order to output datacorresponding to the column address COL_ADDR.

The I/O gating circuit 490 may include circuitry for gating input-outputdata. The I/O gating circuit 490 may further include read data latchesfor storing data output from the bank arrays 480 a-480 h, and writedrivers for writing data to the bank arrays 480 a-480 h.

Data to be read from one bank array of the bank arrays 480 a-480 h maybe sensed by a sense amplifier 485 coupled to the one bank array fromwhich the data is to be read, and may be stored in the read datalatches. The data stored in the read data latches may be provided to thememory controller 20 via the data I/O circuit 500. Data DQ to be writtenin one bank array of the bank arrays 480 a-480 h may be provided to thedata I/O circuit 500 from the memory controller 20. The write driver maywrite the data DQ in one bank array of the bank arrays 480 a-480 h.

The control logic 410 may control operations of the memory device 400.For example, the control logic 410 may generate control signals for thememory device 400 in order to perform a write operation or a readoperation. The control logic 410 may include a command decoder 411 thatdecodes a command CMD received from the memory controller 20 and a moderegister set 412 that sets an operation mode of the memory device. Forexample, a value of a register in the mode register set 412 may indicatethe operation mode of the memory device.

FIG. 5 is a block diagram illustrating an embodiment of a datainput-output circuit included in the memory device of FIG. 4 accordingto an exemplary embodiment of the inventive concept.

Referring to FIG. 5, a data input-output circuit 500 includes an ODTcircuit 300, a data input-output pin 600, a transmission driver DR 710and a reception buffer BF 720. The transmission driver 710 drives thedata input-output pin 600 based on read data and the reception buffer720 receives write data provided through the data input-output pin 600.For example, the read data is output from a memory of a memory rank tothe transmission driver 710 and the memory controller outputs write datato the reception buffer 720. In an embodiment, the transmission driverDR 710 and the reception buffer BF 720 are implemented by an operationalamplifier.

The ODT circuit 300 includes a termination control unit 310 (e.g., atermination control circuit) and a termination resistor unit 350.

The termination resistor unit 350 is coupled to the data input-outputpin 600 and provides termination impedance to a transmission linecoupled to the data input-output pin 600. The method of controlling ODTaccording to an exemplary embodiment may be applied to controlterminations of input-output pins for bidirectional communicationbetween the memory controller 20 and the memory device 30. Thus themethod according to an exemplary embodiment may be applied to a datastrobe pin, a data mask pin, or a termination data strobe pin inaddition to the data input-output pin 600. The ODT of an address pin, acommand pin for unidirectional communication from the memory controller20 to the memory device 30 is excluded from the method according to anexemplary embodiment. The term “pin” broadly refers to an electricalinterconnection for an integrated circuit, e.g., a pad or otherelectrical contact on the integrated circuit.

In an embodiment, the termination resistor unit 350 performs a pull-uptermination operation to provide termination resistance between a powersupply voltage node and the data input-output pin 600 and/or a pull-downtermination operation to provide termination resistance between a groundnode and the data input-output pin 600. A center-tapped termination(CTT) for both of the pull-up and pull-down termination operations willbe described below with reference to FIGS. 14A and 14B, a firstpseudo-open drain (POD) termination for only the pull-down terminationoperation will be described below with reference to FIGS. 15A and 15Band a second POD termination for only the pull-up termination operationwill be described below with reference to FIGS. 16A and 16B.

Even though FIG. 5 illustrates an exemplary embodiment where a distincttermination resistor unit 350 is equipped, a signal driver (not shown)itself in the transmission driver 710 may function as terminationresistors. For example, in the write operation, the transmission driver710 does not transmit read data and the transmission driver 710functions as the termination resistor unit 350 while the receptionbuffer 720 is enabled to receive write data.

When the termination resistor unit 350 performs the pull-up terminationoperation, a voltage of the transmission line connected to the datainput-output pin 600 may be maintained substantially at a level of thepower supply voltage. As a result, a current flows through thetermination resistor unit 350 and the transmission line only when dataof a logic low level are transferred. In contrast, when the terminationresistor unit 350 performs the pull-down termination operation, thevoltage of the transmission line connected to the data input-output pin600 may be maintained substantially at the ground voltage. As a result,a current flows through the termination resistor unit 350 and thetransmission line only when data of a logic high level is transferred.

The termination control unit 310 (e.g., a termination control circuit)receives a strength code SCD and an output enable signal OEN. Thetermination control unit 310 generates a termination control signal TCSfor controlling the termination resistor unit 350 to adjust thetermination impedance based on the strength code SCD and the outputenable signal OEN.

In an exemplary embodiment, the strength code SCD is a plurality of bitsassociated with a data rate. The data rate refers to an operatingfrequency of the memory device or a toggle rate of data that istransferred through the data input-output pin 600. For example, thetermination impedance may be changed to a first impedance when theoperating frequency is a first frequency and changed to a secondtermination when the operation frequency is a second other frequency. Aswill be described below with reference to FIGS. 19A and 19B, thestrength code SCD of multiple bits may be provided based on the valuesstored in the mode register 412 in FIG. 4.

In an embodiment, the output enable signal OEN is activated during aread operation. While the output enable signal OEN is active, thetermination control unit 310 provides a termination control signal TCSat a predetermined logic level to control the termination resistor unit350 not to provide the termination impedance. In that case, thetermination resistor unit 350 may be electrically decoupled from thedata input-output pin 600 in response to the termination control signalTCS having the predetermined logic level. When the termination resistorunit 350 is electrically decoupled from the data input-output pin 600,the ODT circuit 300 or the termination resistor unit 350 may be referredto as “being disabled”.

While the output enable signal OEN is deactivated during a writeoperation, the termination control unit 310 generates the terminationcontrol signal TCS to control the termination resistor unit 350 toprovide the termination impedance. The termination control unit 310 maychange a logic level of the termination control signal TCS in responseto the strength code SCD to vary the termination impedance. For example,a value of the strength code SCD may indicate a particular terminationimpedance or resistance. If the termination resistor unit 350 waspreviously electrically decoupled from the data input-output pin 600,the termination resistor unit 350 is re-coupled to the data input-outputunit 600 in response to application of the termination control signalTCS.

FIG. 6 is a circuit diagram illustrating an ODT circuit included in thedata input-output circuit of FIG. 5 according to an exemplary embodimentof the inventive concept.

Referring to FIG. 6, an ODT circuit 300 includes a pull-up terminationcontrol unit 330, a pull-down termination control unit 340, a pull-updriver 360 and a pull-down driver 370.

The pull-up termination control unit 330 includes first to thirdselectors 334-336 (e.g., multiplexers), and the pull-down terminationcontrol unit 340 includes fourth to sixth selectors 344-346 (e.g.,multiplexers). The pull-up driver 360 includes first to third PMOStransistors 361-363 and first to third resistors R1-R3. The first tothird PMOS transistors 361-363 are connected to a power supply voltageVDDQ, and each of the first to third resistors R1-R3 is connectedbetween a respective one of the first to third PMOS transistors 361-363and the data input-output pin 600. The pull-down driver 370 includesfirst to third NMOS transistors 371-373 and fourth to sixth resistorsR4-R6. The first to third NMOS transistors 371-373 are connected to aground voltage VSSQ, and each of the fourth to sixth resistors R4-R6 isconnected between a respective one of the first to third NMOStransistors 371-373 and the data input-output pin 600.

Each of the first to third selectors 334-336 may receive the powersupply voltage VDDQ as each of first inputs, the first to third strengthcode bits SCD1, SCD2, and SCD3 as each of second inputs and the outputenable signal OEN as each of control signals. Each of the fourth tosixth selectors 344-346 may receive the ground voltage VDDQ as each offirst inputs, the fourth to sixth strength code bits SCD4, SCD5, andSCD6 as each of second inputs and the output enable signal OEN as eachof control signals. The strength code SCD may include the strength codebits SCD1-SDC6.

While the output enable signal OEN is activated at a logic high levelduring a read operation, the first to third selectors 334-336 may outputthe first to third termination control signals TCS1, TCS2 and TCS3 oflogic high level and the fourth to sixth selectors 344-346 may outputthe fourth to sixth termination control signals TCS4, TCS5 and TCS6 oflogic low level. The first to third PMOS transistors 361-363 are turnedoff in response to the first to third termination control signals TCS1,TCS2 and TCS3 of logic high level and the fourth to sixth PMOStransistors 371-373 are turned off in response to the fourth to sixthtermination control signals TCS4, TCS5 and TCS6 of logic low level. Thusthe data input-output pin 600 is electrically disconnected from thepower supply voltage VDDQ and the ground voltage VSSQ and the ODTcircuit 300 is disabled during the read operation.

While the output enable signal OEN is activated at logic low levelduring a write operation, the first to third selectors 334-336 outputthe first to third strength code bits SCD1, SCD2 and SCD3 as the firstto third termination control signals TCS1, TCS2 and TCS3 and the fourthto sixth selectors 344-346 output the fourth to sixth strength code bitsSCD4, SCD5 and SCD6 as the fourth to sixth termination control signalsTCS4, TCS5 and TCS6.

As described above, the strength code SCD, that is, the strength codebits SCD1-SCD6 may be associated with the data rate or the operatingfrequency. Accordingly, when the data rate is relatively high, channelsare rapidly charged/discharged by decreasing the termination impedance.When the data rate is relatively low, current consumption may be reducedby increasing the termination impedance for decreasing DC currentsflowing through the channels.

Although each of the first to sixth resistors R1-R6 is illustrated inFIG. 6 as a single resistor, in an exemplary embodiments each of thefirst to sixth resistors R1-R6 may be implemented with a plurality ofresistors that are connected in parallel and/or in series and aplurality of transistors for controlling connections of the plurality ofresistors.

FIG. 6 illustrates an exemplary embodiment of the CTT scheme of FIGS.14A and 14B, and the POD termination scheme may be understood therefrom.A configuration omitting the pull-up termination control unit 330 andthe pull-up driver 360 from FIG. 6 corresponds to the first PODtermination of FIGS. 15A and 15B and a configuration omitting thepull-down termination control unit 340 and the pull-down driver 370 fromFIG. 6 corresponds to the second POD termination of FIGS. 16A and 16B.

FIGS. 7, 8A and 8B are diagrams illustrating a method of controlling ODTin a write operation according to an exemplary embodiment of theinventive concept.

As illustrated in FIG. 7, the memory controller MC is connected inparallel to the plurality of memory ranks RNK1-RNKM through the datainput-output pins PADC and PAD1-PADM and the transmission line TL. Thetransmission line TL is branched at a common node NC to the datainput-output pins PAD1-PADM of the memory ranks RNK1-RNKM.

FIG. 7 illustrates an exemplary case where the first memory rank RNK1corresponds to the write target memory rank and the other memory ranksRNK2-RNKM correspond to the non-target memory ranks. In FIG. 7, theenabled elements are hatched. In the write operation, the transmissiondriver DR0 is enabled and the reception buffer BF0 is disabled in thememory controller MC corresponding to the data transmitter device. Inaddition, the reception buffer BF1 is enabled in the write target memoryrank RNK1 corresponding to the data receiver device, whereas thetransmission driver DR1 in the write target memory rank RNK1, thereception buffers BF2-BFM and the transmission drivers DR2-DRM in thenon-target memory ranks RNK2-RNKM are disabled.

According to an exemplary embodiment, during the write operation, theODT circuit TER1 in the write target memory rank RNK1 and the ODTcircuits TER2-TERM in the non-target memory ranks RNK2-RNKM are allenabled. The ODT circuit TER0 in the memory controller MC is disabled.The current path may be formed from the transmission driver DR0 in thememory controller MC to all of the ODT circuits TER1-TERM in the memoryranks RNK1-RNKM and thus signal reflection may be reduced and signalintegrity may be enhanced.

In FIGS. 8A and 8B, time points Ta0-Tf1 correspond to edges of operationclock signal pair CK_T and CK_C. A first rank selection signal CS_RNK1and a first command signal CMD_RNK1 are dedicated to a first memory rankRNK1 and a second rank selection signal CS_RNK2 and a second commandsignal CMD_RNK2 are dedicated to a second memory rank RNK2. A datastrobe signal pair WCK_T and WCK_C and data signals DQ[15:0] areprovided from the memory controller MC to the write target memory rankRNK1. ODT_RNK1 represents an ODT state of the first memory rank RNK1 andODT_RNK2 represents an ODT state of the second memory rank RNK2. DESrepresents “deselect” and TRANSITION represents transition intervalswhen the ODT state is changed.

FIGS. 8A and 8B show an example case of the write operation when thefirst memory rank RNK1 corresponds to the write target memory rank andthe second memory rank RNK2 corresponds to the non-target memory rank.While the first rank selection signal CS_RNK1 is activated, the CAScommand and the write command WR are transferred through the firstcommand signal CMD_RNK1, and the second rank selection signal CS_RNK2and the second command signal CMD_RNK2 maintain the deactivated states.

According to an exemplary embodiment, during the write operation, theODT circuits in the write target memory rank RNK1 and the ODT circuit inthe non-target memory rank RNK2 is enabled. In an exemplary embodiment,as illustrated in FIG. 8A, the ODT circuits in the write target memoryrank RNK1 and the non-target memory rank RNK2 maintain the initial stateNT-ODT while the data signals DQ[15:0] for the write operation aretoggling. In an exemplary embodiment, the ODT circuit in the non-targetmemory rank RNK2 maintains the initial state NT-ODT and the ODT circuitin the write target memory rank RNK1 is changed into a state TG-ODThaving a resistance value different from that of the initial stateNT-ODT while the data signals DQ[15:0] for the write operation aretoggling. While data signals of 16 bit data are described above, theinventive concept is not limited thereto since the size of the data maybe less than 16 bits or greater than 16 bits in alternate embodiments.

FIGS. 9 and 10 are diagrams illustrating a method of controlling ODT ina read operation according to an exemplary embodiment of the inventiveconcept.

As illustrated in FIG. 9, the memory controller MC is connected inparallel to the plurality of memory ranks RNK1-RNKM through the datainput-output pins PADC and PAD1-PADM and the transmission line TL. Thetransmission line TL is branched at a common node NC to the datainput-output pins PAD1-PADM of the memory ranks RNK1-RNKM.

FIG. 9 illustrates an exemplary case where the first memory rank RNK1corresponds to the read target memory rank and the other memory ranksRNK2-RNKM correspond to the non-target memory ranks. In FIG. 9, theenabled elements are hatched. In the read operation, the receptionbuffer BF0 is enabled and the transmission driver DR0 is disabled in thememory controller MC corresponding to the data receiver device. Inaddition, the transmission driver DR1 is enabled in the read targetmemory rank RNK1 corresponding to the data transmitter device, whereasthe reception buffer BF1 in the read target memory rank RNK1, thereception buffers BF2-BFM and the transmission drivers DR2-DRM in thenon-target memory ranks RNK2-RNKM are disabled.

According to an exemplary embodiment, during the read operation, the ODTcircuit TER1 in the write target memory rank RNK1 is disabled and theODT circuits TER2-TERM in the non-target memory ranks RNK2-RNKM areenabled. The ODT circuit TER0 in the memory controller MC is enabled.The current path may be formed from the transmission driver DR1 in theread target memory rank RNK1 to the ODT circuit TER0 in the transmissiondriver DR0 and the ODT circuits TER2-TERM in the non-target memory ranksRNK2-RNKM and thus signal reflection may be reduced and signal integritymay be enhanced.

In FIG. 10, time points Ta0Tf1 correspond to edges of an operation clocksignal pair CK_T and CK_C. A first rank selection signal CS_RNK1 and afirst command signal CMD_RNK1 are dedicated to a first memory rank RNK1and a second rank selection signal CS_RNK2 and a second command signalCMD_RNK2 are dedicated to a second memory rank RNK2. A data strobesignal pair WCK_T and WCK_C and data signals DQ[15:0] are provided fromthe read target memory rank RNK1 to the memory controller MC. ODT_RNK1represents an ODT state of the first memory rank RNK1 and ODT_RNK2represents an ODT state of the second memory rank RNK2. DES represents“deselect” and TRANSITION represents transition intervals when the ODTstate is changed.

FIG. 10 shows an example case of the read operation when the firstmemory rank RNK1 corresponds to the read target memory rank and thesecond memory rank RNK2 corresponds to the non-target memory rank. Whilethe first rank selection signal CS_RNK1 is activated, the CAS commandand the read command RD are transferred through the first command signalCMD_RNK1, and the second rank selection signal CS_RNK2 and the secondcommand signal CMD_RNK2 maintain the deactivated states.

According to an exemplary embodiment, during the read operation, the ODTcircuit in the read target memory rank RNK1 is disabled and the ODTcircuit in the non-target memory rank RNK2 is enabled. In an exemplaryembodiment, as illustrated in FIG. 10, the ODT circuit in the non-targetmemory rank RNK2 maintains the initial state NT-ODT and the ODT circuitin the read target memory rank RNK1 is changed into the disabled stateNT-ODT OFF while the data signals DQ[15:0] for the read operation aretoggling.

FIG. 11 is a diagram illustrating an embodiment of a resistance settingapplied to a method of controlling ODT according to an exemplaryembodiment of the inventive concept.

Referring to FIG. 11, during the read operation, the ODT circuit in thetarget memory rank RNK_TG is disabled and the ODT circuits in thenon-target memory rank RNK_NT and the memory controller MC have a firstresistance value M*Rtt. During the write operation, the ODT circuits inthe target memory rank RNK_TG and the non-target memory rank RNK_NT havethe first resistance value M*Rtt and the ODT circuit in the memorycontroller MC is disabled. The first resistance value M*Rtt maycorrespond to a resistance value of the above-mentioned initial state.Accordingly, as described with reference to FIG. 8A, the ODT circuits inthe target memory rank RNK_TG and the non-target memory rank RNK_NT maymaintain the initial state to have the first resistance value M*Rttduring the write operation.

FIG. 12 is a diagram for describing an equivalent resistance of the ODTcircuit in a write operation corresponding to the resistance setting ofFIG. 11.

Referring to FIG. 12, during the write operation while data istransferred from the memory controller MC to the target memory rankRNK1, all ODT circuits in the target memory rank RNK1 and the non-targetmemory ranks RNK2-RNKM have the first resistance value M*Rtt. When thenumber of the plurality of memory ranks RNK1-RNKM is M, M resistorshaving the first resistance value M*Rtt are connected in parallelbetween the common node NC and the power supply voltage VDDQ and theequivalent resistance value between the common node NC and the powersupply voltage VDDQ corresponds to Rtt. In the same way, the equivalentresistance value between the common node NC and the ground voltage VSSQcorresponds to Rtt. The various termination schemes corresponding to theequivalent resistance value Rtt will be described below with referenceto FIGS. 14A through 16B.

FIG. 13 is a diagram for describing an equivalent resistance of the ODTcircuit in a read operation corresponding to the resistance setting ofFIG. 11.

Referring to FIG. 13, during the read operation while data istransferred from the target memory rank RNK1 to the memory controllerMC, the ODT circuit in the target memory rank RNK1 is disabled and theODT circuits in the non-target memory ranks RNK2-RNKM and the memorycontroller MC have the first resistance value M*Rtt. When the number ofthe plurality of memory ranks RNK1-RNKM is M, M resistors having thefirst resistance value M*Rtt are connected in parallel between thecommon node NC and the power supply voltage VDDQ and the equivalentresistance value between the common node NC and the power supply voltageVDDQ corresponds to Rtt. In the same way, the equivalent resistancevalue between the common node NC and the ground voltage VSSQ correspondsto Rtt. The various termination schemes corresponding to the equivalentresistance value Rtt will be described below with reference to FIGS. 14Athrough 16B. The configurations of FIGS. 14A through 16B are exemplaryembodiments for describing a few possible termination schemes, butconfiguration of the transmission driver and the ODT circuit are notlimited thereto. For example, the N-type and the P-type of thetransistors may be exchanged and/or the transistors for power gating maybe added to the transmission driver.

FIGS. 14A and 14B are diagrams for describing a center-tappedtermination (CTT).

Referring to FIG. 14A, a transmission driver 70 in a transmitter devicedrives an input-output pad PADH based on a transmission signal ST froman internal signal of the transmitter device. The input-output pad PADHof the transmitter device is connected to input-output pad PADS of areceiver device through a transmission line TL. A termination circuit 80of the CTT scheme is connected to the input-output pad PADS of thereceiver device for impedance matching. The reception buffer BF in thereceiver device may compare the input signal SI through the input-outputpad PADS with the reference voltage VREF to provide the buffer signal SBto an internal circuit of the receiver device.

The transmission driver 70 may include a pull-up unit connected betweena first power supply voltage VDDQ and the input-output pad PADH and apull-down unit connected between the input-output pad PADH and a secondpower supply voltage VSSQ lower than the first power supply voltageVDDQ. The pull-up unit may include a turn-on resistor RON and ap-channel metal oxide semiconductor (PMOS) transistor TP1 that isswitched in response to the transmission signal ST. The pull-down unitmay include a turn-on resistor RON and a n-channel metal oxidesemiconductor (NMOS) transistor TN1 that is switched in response to thetransmission signal ST. The turn-on resistors RON may be omitted andeach turn-on resistor RON may represent a resistance between the voltagenode and the input-output pad PADH when each of the transistors TP1 andTN1 is turned on.

The termination circuit 80 of the CTT scheme may include a first subtermination circuit connected between the first power supply voltageVDDQ and the input-output pad PADS and a second sub termination circuitconnected between the input-output pad PADS and the second power supplyvoltage VSSQ. The first sub termination circuit may include atermination resistor Rtt and a PMOS transistor TP2 that is turned on inresponse to a low voltage. The second sub termination circuit mayinclude a termination resistor Rtt and an NMOS transistor TN2 that isturned on in response to a high voltage. The termination resistors Rttmay be omitted and each termination resistor Rtt may represent aresistance between the voltage node and the input-output pad PADS wheneach of the transistors TP2 and TN2 is turned on.

In case of the termination circuit 80 of the CTT scheme in FIG. 14A, thehigh voltage level VIH and the low voltage level VIL of the input signalSI may be represented as FIG. 14B. The second power supply voltage VSSQmay be assumed to be a ground voltage (i.e., VSSQ=0) and the voltagedrop along the transmission line TL may be neglected. Thus the highvoltage level VIH, the low voltage level VIL and the optimal referencevoltage VREF may be calculated according to Expression 1.

VIH=VDDQ*(RON+Rtt)/(2RON+Rtt),

VIL=VDDQ*RON/(2RON+Rtt),

VREF=(VIH+VIL)/2=VDDQ/2  Expression 1

FIGS. 15A and 15B are diagrams for describing a first pseudo-open drain(POD) termination.

Referring to FIG. 15A, a transmission driver 70 in a transmitter devicedrives an input-output pad PADH based on a transmission signal ST froman internal signal of the transmitter device. The input-output pad PADHof the transmitter device is connected to input-output pad PADS of areceiver device through a transmission line TL. A termination circuit 81of the first POD termination scheme may be connected to the input-outputpad PADS of the receiver device for impedance matching. The receptionbuffer BF in the receiver device may compare the input signal SI throughthe input-output pad PADS with the reference voltage VREF to provide thebuffer signal SB to an internal circuit of the receiver device.

The transmission driver 70 may include a pull-up unit connected betweena first power supply voltage VDDQ and the input-output pad PADH and apull-down unit connected between the input-output pad PADH and a secondpower supply voltage VSSQ lower than the first power supply voltageVDDQ. The pull-up unit may include a turn-on resistor RON and a PMOStransistor TP1 that is switched in response to the transmission signalST. The pull-down unit may include a turn-on resistor RON and an NMOStransistor TN1 that is switched in response to the transmission signalST. The turn-on resistors RON may be omitted and each turn-on resistorRON may represent a resistance between the voltage node and theinput-output pad PADH when each of the transistors TP1 and TN1 is turnedon.

The termination circuit 81 of the first POD termination scheme mayinclude a termination resistor Rtt and an NMOS transistor TN2 that isturned on in response to a high voltage. The termination resistor Rttmay be omitted and the termination resistor Rtt may represent aresistance between the voltage node and the input-output pad PADS whenthe NMOS transistor TN2 is turned on.

In case of the termination circuit 81 of the first POD terminationscheme in FIG. 15A, the high voltage level VIH and the low voltage levelVIL of the input signal SI may be represented as FIG. 15B. The secondpower supply voltage VSSQ may be assumed to be a ground voltage (i.e.,VSSQ=0) and the voltage drop along the transmission line TL may beneglected. Thus the high voltage level VIH, the low voltage level VILand the optimal reference voltage VREF may be calculated according toExpression 2.

VIH=VDDQ*RTT/(RON+RTT),

VIL=VSSQ=0,

VREF=(VIH+VIL)/2=VDDQ*RTT/2(RON+RTT)  Expression 2

FIGS. 16A and 16B are diagrams for describing a second POD termination.

Referring to FIG. 16A, a transmission driver 70 in a transmitter devicedrives an input-output pad PADH based on a transmission signal ST froman internal signal of the transmitter device. The input-output pad PADHof the transmitter device is connected to input-output pad PADS of areceiver device through a transmission line TL. A termination circuit 82of the second POD termination scheme is connected to the input-outputpad PADS of the receiver device for impedance matching. The receptionbuffer BF in the receiver device may compare the input signal SI throughthe input-output pad PADS with the reference voltage VREF to provide thebuffer signal SB to an internal circuit of the receiver device.

The transmission driver 70 may include a pull-up unit connected betweena first power supply voltage VDDQ and the input-output pad PADH and apull-down unit connected between the input-output pad PADH and a secondpower supply voltage VSSQ lower than the first power supply voltageVDDQ. The pull-up unit may include a turn-on resistor RON and a PMOStransistor TP1 that is switched in response to the transmission signalST. The pull-down unit may include a turn-on resistor RON and an NMOStransistor TN1 that is switched in response to the transmission signalST. The turn-on resistors RON may be omitted and each turn-on resistorRON may represent a resistance between the voltage node and theinput-output pad PADH when each of the transistors TP1 and TN1 is turnedon.

The termination circuit 82 of the second POD termination scheme mayinclude a termination resistor Rtt and a PMOS transistor TP2 that isturned on in response to a low voltage. The termination resistor Rtt maybe omitted and the termination resistor Rtt may represent a resistancebetween the voltage node and the input-output pad PADS when the NMOStransistor TN2 is turned on.

In case of the termination circuit 82 of the first POD terminationscheme in FIG. 16A, the high voltage level VIH and the low voltage levelVIL of the input signal SI may be represented as FIG. 16B. The secondpower supply voltage VSSQ may be assumed to be a ground voltage (i.e.,VSSQ=0) and the voltage drop along the transmission line TL may beneglected. Thus the high voltage level VIH, the low voltage level VILand the optimal reference voltage VREF may be calculated according toExpression 3.

VIH=VDDQ,

VIL=VDDQ*RON/(RON+Rtt),

VREF=(VIH+VIL)/2=VDDQ*(2RON+Rtt)/2(RON+Rtt)  Expression 3

As such, the ODT circuit according to at least one exemplary embodimentmay adopt various termination schemes. In an exemplary embodiment, atraining process is performed to obtain the optimal reference voltagesVREF according to Expressions 1, Expression 2 and Expression 3. In anexemplary embodiment, the memory controller considers the ODT resistorsof the non-target memory ranks that are enabled continuously to adjustthe resistance value of the ODT circuit in the memory controller or theturn-on resistance value of the transmission driver in the memorycontroller.

FIG. 17 is a diagram illustrating an embodiment of the resistancesetting applied to a method of controlling ODT according to an exemplaryembodiment of the inventive concept.

Referring to FIG. 17, during the read operation, the ODT circuit in thetarget memory rank RNK_TG is disabled and the ODT circuits in thenon-target memory rank RNK_NT and the memory controller MC have a firstresistance value M*Rtt. During the write operation, the ODT circuit inthe target memory rank RNK_TG has a second resistance value M*Rtt+Rtgdifferent from the first resistance value M*Rtt, the ODT circuit in thenon-target memory rank RNK_NT has the first resistance value M*Rtt andthe ODT circuit in the memory controller MC is disabled. The firstresistance value M*Rtt may correspond to a resistance value of theabove-mentioned initial state. For example, the first resistance valueM*Rtt may be about 70Ω and the second resistance value M*Rtt+Rtg may beabout 150Ω. Accordingly, as described with reference to FIG. 8B, theresistance value of the ODT circuit in the target memory rank RNK_TG maybe changed from the first resistance value M*Rtt to the secondresistance value M*Rtt+Rtg and the ODT circuit in the non-target memoryrank RNK_NT may maintain the initial state to have the first resistancevalue M*Rtt during the write operation. In an embodiment, the secondresistance value is greater than the first resistance value, the ODTcircuit of the target memory rank RNK_TG is disabled and the ODTcircuits of the non-target memory ranks RNK_NT are enabled and set tothe first resistance value during a read operation, and the ODT circuitof the target memory rank is enabled and set to the second resistanceduring a write operation.

FIG. 18 is a diagram illustrating a CAS command according to anexemplary embodiment.

FIG. 18 illustrates an exemplary CAS command conforming to the low powerdouble data rate 5 (LPDDR5) standard. Referring to FIG. 18, a CAScommand may be represented as a combination of command-address signalsCA0˜CA5. “L” represents a logic low level, “H” represents a logic highlevel, EDC_EN, WS_RD, WS_FAST, DC0-DC3, NT0, NT1 and BL represent fieldvalues forming the CAS command. Particularly NT0 and NT1 represent thefield values for termination control.

As illustrated in FIG. 18, when the static ODT control according to anexemplary embodiment is adopted, NT0 and NT1 may be omitted and thecorresponding portion may be reserved for future use (RFU).

FIGS. 19A and 19B are diagrams for describing a mode register for ODTaccording to an exemplary embodiment.

The information for the ODT control may be stored in the mode register412 in FIG. 4. For example, the corresponding portion of the moderegister 412 may have mode register settings MRSET as illustrated inFIGS. 19A and 19B. Some values of operands OP0-OP7 may representinformation on a resistance value of the ODT circuit.

FIG. 19A shows a value ODT for commonly controlling the resistance valueof the ODT circuits in the target memory rank and the non-target memoryrank as described with reference to FIG. 8A. FIG. 19B shows a firstvalue TG-ODT for controlling the first resistance value of the ODTcircuit in the target memory rank and a second value NT-ODT forcontrolling the second resistance value of the ODT circuit in thenon-target memory rank as described with reference to FIG. 8B. Thevalues ODT, TG-ODT and NT-ODT stored in the mode register 412 may beprovided from the memory controller to the memory ranks through a moderegister write operation. The above-mentioned strength code SCD may beprovided based on the values ODT, TG-ODT and NT-ODT.

FIG. 20 is a structural diagram illustrating a semiconductor memorydevice according to an exemplary embodiment of the inventive concept.

Referring to FIG. 20, a semiconductor memory device 900 includes firstthrough kth semiconductor integrated circuit layers LA1 through LAk, inwhich the lowest first semiconductor integrated circuit layer LA1 isassumed to be an interface or control chip and the other semiconductorintegrated circuit layers LA2 through LAk are assumed to be slave chipsincluding core memory chips. The slave chips may form a plurality ofmemory ranks as described above.

The first through kth semiconductor integrated circuit layers LA1through LAk may transmit and receive signals between the layers bythrough-substrate vias TSVs (e.g., through-silicon vias). The lowestfirst semiconductor integrated circuit layer LA1 as the interface orcontrol chip may communicate with an external memory controller througha conductive structure formed on an external surface.

Each of the first semiconductor integrated circuit layer 910 through thekth semiconductor integrated circuit layer 920 may include memoryregions 921 and peripheral circuits 922 for driving the memory regions921. For example, the peripheral circuits 922 may include a row-driverfor driving wordlines of a memory, a column-driver for driving bit linesof the memory, a data input-output circuit for controlling input-outputof data, a command buffer for receiving a command from an outside sourceand buffering the command, and an address buffer for receiving anaddress from an outside source and buffering the address.

The first semiconductor integrated circuit layer 910 may further includea control circuit. The control circuit may control access to the memoryregion 921 based on a command and an address signal from a memorycontroller and may generate control signals for accessing the memoryregion 921.

FIG. 21 is a block diagram illustrating a mobile system according to anexemplary embodiment of the inventive concept.

Referring to FIG. 21, a mobile system 1200 includes an applicationprocessor 1210, a connectivity circuit 1220, a volatile memory device(VM) 1230, a nonvolatile memory device (NVM) 1240, a user interface1250, and a power supply 1260.

The application processor 1210 may execute computer instructions storedin computer-readable media (e.g., memory devices), includingapplications such as a web browser, a game application, a video player,etc. The connectivity circuit 1220 may perform wired or wirelesscommunication with an external device. The volatile memory device 1230may store data processed by the application processor 1210, or mayoperate as a working memory. For example, the volatile memory device1230 may be a dynamic random access memory, such as double data ratesynchronous dynamic random-access memory (DDR SDRAM), low power doubledata rate synchronous dynamic random-access memory (LPDDR SDRAM),graphics double data rate synchronous dynamic random-access memory (GDDRSDRAM), Rambus dynamic random-access memory (RDRAM), etc. Thenonvolatile memory device 1240 may store a boot image for booting themobile system 1200. The user interface 1250 may include at least oneinput device, such as a keypad, a touch screen, etc., and at least oneoutput device, such as a speaker, a display device, etc. The powersupply 1260 may supply a power supply voltage to the mobile system 1200.In an exemplary embodiment, the mobile system 1200 further includes acamera image processor (CIS), and/or a storage device, such as a memorycard, a solid state drive (SSD), a hard disk drive (HDD), a CD-ROM, etc.

The volatile memory device 1230 and/or the nonvolatile memory device1240 may have configuration for performing the method of controlling ODTaccording to the exemplary embodiments as described with reference toFIGS. 1 through 19B.

As described above, the method of controlling ODT and the systemperforming the method according to an exemplary embodiment may reducepower consumption and enhance signal integrity through static ODTcontrol such that the ODT circuits of the target memory rank and thenon-target memory ranks are maintained generally in the enabled statewhereas the ODT circuit of the read target memory rank is disabledduring the read operation.

Embodiments of the present inventive concept may be applied to variousdevices and systems including a memory device. For example, the presentinventive concept may be applied to systems such as a memory card, amobile phone, a smart phone, a personal digital assistant (PDA), aportable multimedia player (PMP), a digital camera, a camcorder,personal computer (PC), a server computer, a workstation, a laptopcomputer, a digital TV, a set-top box, a portable game console, anavigation system, etc.

The foregoing is illustrative of exemplary embodiments of the inventiveconcept and is not to be construed as limiting thereof. Although a fewexemplary embodiments have been described, those skilled in the art willreadily appreciate that many modifications are possible in the exemplaryembodiments without materially departing from the present inventiveconcept.

What is claimed is:
 1. A method of operating a low power double datarate 5 (LPDDR5) dynamic random access memory (DRAM) in a multi-rankmemory system including a plurality of memory ranks, the methodcomprising: receiving a CAS command and a write command, wherein the CAScommand and the write command conform to an LPDDR5 standard, the writecommand is dedicated to a first memory rank among the plurality ofmemory ranks and the write command is not dedicated to a second memoryrank among the plurality of memory ranks; enabling a reception buffer inthe first memory rank; disabling a transmission driver in the firstmemory rank; disabling a reception buffer and a transmission driver inthe second memory rank; receiving a data strobe signal pair; enablingon-die terminal (ODT) circuits of the first memory rank and the secondmemory rank in response to the write command; receiving write datasignals while the data strobe signal pair is toggled during the enablingof the ODT circuits of the first memory rank and the second memory rank;receiving the CAS command and a read command, wherein the read commandconforms to the LPDDR5 standard, the read command is dedicated to thefirst memory rank and the read command is not dedicated to the secondmemory rank; enabling the transmission driver in the first memory rank;disabling the reception buffer in the first memory rank; disabling thereception buffer and the transmission driver in the second memory rank;disabling the ODT circuit of the first memory rank and enabling the ODTcircuit of the second memory rank in response to the read command; andsending read data signals while the data strobe signal pair is toggledduring the disabling of the ODT circuit of the first memory rank and theenabling of the ODT circuit of the second memory rank.
 2. The method ofclaim 1, wherein the first memory rank is a target memory rank and thesecond memory rank is a non-target memory rank.
 3. The method of claim1, wherein both of the ODT circuit of the first memory rank and the ODTcircuit of the second memory rank are enabled when the multi-rank systemis powered on.
 4. The method of claim 1, wherein the ODT circuits of theplurality of memory ranks have a first resistance value in an initialstate.
 5. The method of claim 4, wherein the enabling of the ODTcircuits of the first memory rank and the second memory rank in responseto the write command comprises maintaining the ODT circuits of theplurality of memory ranks in the initial state to have the firstresistance value.
 6. The method of claim 4, wherein the enabling of theODT circuits of the first memory rank and the second memory rank inresponse to the write command comprises storing the first resistancevalue in a mode register.
 7. The method of claim 4, wherein the enablingof the ODT circuit of the second memory rank in response to the readcommand comprises maintaining the ODT circuits of the plurality ofmemory ranks in the initial state to have the first resistance value. 8.The method of claim 4, wherein the enabling of the ODT circuit of thesecond memory rank in response to the read command comprises storing thefirst resistance value in a mode register.
 9. The method of claim 1,wherein a WCK reception buffer in the first memory rank to receive thedata strobe signal pair is turned on in response to the CAS command. 10.The method of claim 1, wherein the CAS command does not include fieldvalues for termination control such that the multi-rank memory systemperforms a static ODT control.
 11. A low power double data rate 5(LPDDR5) dynamic random access memory (DRAM) comprising: a first memoryrank comprising a first on-die terminal (ODT) circuit, a first receptionbuffer and a first transmission driver; and a second memory rankcomprising a second ODT circuit, a second reception buffer and a secondtransmission driver, wherein, when a read command dedicated to the firstmemory rank is received, the first memory rank enables the firsttransmission driver and disables the first reception buffer and thefirst ODT circuit, and the second memory rank enables the second ODTcircuit and disables the second transmission driver and the secondreception buffer.
 12. The LPDDR5 DRAM of claim 11, wherein the firstmemory rank is a target memory rank and the second memory rank is anon-target memory rank.
 13. The LPDDR5 DRAM of claim 11, wherein both ofthe first ODT circuit of the first memory rank and the second ODTcircuit of the second memory rank are enabled to have a first resistancevalue in an initial state when the LPDDR5 DRAM is powered on.
 14. TheLPDDR5 DRAM of claim 13, wherein the second memory rank maintains thefirst ODT circuit in the first initial state to have the firstresistance value, when the read command dedicated to the first memoryrank is received.
 15. The LPDDR5 DRAM of claim 13, wherein, when a writecommand dedicated to the first memory rank is received, the first memoryrank enables the first reception buffer and the first ODT circuit anddisables the first transmission driver, and the second memory rankenables the second ODT circuit and disables the second transmissiondriver and the second reception buffer.
 16. The LPDDR5 DRAM of claim 15,wherein the first memory rank and the second memory rank maintain thefirst ODT circuit and the second ODT circuit in the first initial stateto have the first resistance value, when the write command dedicated tothe first memory rank is received.
 17. The LPDDR5 DRAM of claim 15,wherein the first memory rank changes a resistance value of the firstODT circuit from the first resistance value to a second resistance valuedifferent from the first resistance value, when the write commanddedicated to the first memory rank is received.
 18. The LPDDR5 DRAM ofclaim 11, wherein the first memory rank further comprises a WCKreception buffer to receive a data strobe signal and the WCK receptionbuffer is turned on in response to a CAS command.
 19. The LPDDR5 DRAM ofclaim 11, wherein the first memory rank sends read data signals whilethe data strobe signal is toggled during the disabling of the first ODTcircuit of the first memory rank and the enabling of the second ODTcircuit of the second memory rank.
 20. A method of operating a low powerdouble data rate 5 (LPDDR5) dynamic random access memory (DRAM) in amulti-rank memory system including a plurality of memory ranks, themethod comprising: receiving a CAS command and a read command, whereinthe CAS command and the read command conform to an LPDDR5 standard, theread command is dedicated to the first memory rank and the read commandis not dedicated to the second memory rank; enabling a transmissiondriver in the first memory rank; disabling a reception buffer in thefirst memory rank; disabling a reception buffer and a transmissiondriver in a second memory rank; disabling an on-die terminal (ODT)circuit of the first memory rank and enabling an ODT circuit of thesecond memory rank in response to the read command; receiving a datastrobe signal, wherein the data strobe signal starts toggling afterreceiving the read command; and sending read data signals while the datastrobe signal is toggled during the disabling of the ODT circuit of thefirst memory rank and the enabling of the ODT circuit of the secondmemory rank.